| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 17A |
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Advanced process technology
● Ultra-low ON-resistance
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
11 Pages / 0.27 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
Vishay Semiconductor
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
ST Microelectronics
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220
VISHAY
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 100V 14A TO-220AB
International Rectifier
MOSFET N-CH 100V 14A TO-220
Major Brands
Transistor IRF530MOSFET N Channel 100V
Motorola
N-channel MOSFET, 60V, 14A
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin (3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 90Milliohms; ID 17A; TO-220AB; PD 70W; gFS 12S
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