| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 31A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF5305SPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
● Advanced process technology
● Fully avalanche rated
● 175°C Operating temperature
Infineon
11 Pages / 0.68 MByte
Infineon
27 Pages / 0.3 MByte
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2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
Major Brands
Mosfet Irf5305 To-220Abp-Channel -55V
International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; D2Pak; PD 110W; VGS +/-20V
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