IRF5305PBF Datasheet PDF - Infineon

The IRF5305PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

● Drain to source voltage Vds is -55V

● Gate to source voltage is ±20V

● On resistance Rds(on) of 60mohm at Vgs of -10V

● Power dissipation Pd of 110W at 25°C

● Continuous drain current Id of -31A at Vgs -10V and 25°C

● Junction temperature range from -55°C to 175°C