| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 38A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF5210SPBF is a -100V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliable device for wide variety of other applications.
● Advanced process technology
● Ultra low on-resistance
● Repetitive avalanche allowed up to Tjmax
● 150°C Operating temperature
Infineon
10 Pages / 0.3 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
Major Brands
Mosfet Irf5210 To-220Abp-Channel -100V
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.06Ω, Id=-40A)
International Rectifier
INTERNATIONAL RECTIFIER IRF5210STRLPBF MOSFET Transistor, P Channel, 40A, 100V, 60mohm, -10V, 4V
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.06Ω; ID -40A; TO-220AB; PD 200W; VGS +/-20
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