| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | P-CH |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 40A |
The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area.
● Advanced Process Technology
● New Ultra Low On-Resistance
● Fast Switching
● Dynamic dv/dt Rating
● Fully Avalanche Rated
Infineon
9 Pages / 0.18 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.11 MByte
Infineon
1 Pages / 0.14 MByte
Major Brands
Mosfet Irf5210 To-220Abp-Channel -100V
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.06Ω, Id=-40A)
International Rectifier
INTERNATIONAL RECTIFIER IRF5210STRLPBF MOSFET Transistor, P Channel, 40A, 100V, 60mohm, -10V, 4V
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.06Ω; ID -40A; TO-220AB; PD 200W; VGS +/-20
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