| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 9.7A |
The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Advanced process technology
Infineon
9 Pages / 0.16 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
Vishay Semiconductor
Trans MOSFET N-CH 100V 9.2A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 100V 9.2A TO-220AB
ST Microelectronics
Trans MOSFET N-CH 100V 10A Automotive 3Pin(3+Tab) TO-220
International Rectifier
MOSFET N-CH 100V 10A TO-220
Major Brands
Mosfet Irf520 N-Channel 100V
Fairchild
Trans MOSFET N-CH Si 100V 9.2A 3Pin(3+Tab) TO-220AB
Supertex
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs
Rochester
9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ω; ID 9.7A; TO-220AB; PD 48W; VGS +/-20V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
