| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 59A |
The IRF3710ZSPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Ultra-low ON-resistance
● Dynamic dV/dt rating
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.37 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 100V 57A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)
International Rectifier
MOSFET 100V 1 N-CH HEXFET 18mOhms 82NC
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 18Milliohms; ID 7.3A; TO-220AB; PD 2.5W
International
MOSFET N-CH 100V 57A TO-220AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
