| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 57A |
The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Ultra low on-resistance
● Dynamic dV/dt rating
● Fully avalanche rated
● 175°C Operating temperature
Infineon
8 Pages / 0.21 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 100V 57A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)
International Rectifier
MOSFET 100V 1 N-CH HEXFET 18mOhms 82NC
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 18Milliohms; ID 7.3A; TO-220AB; PD 2.5W
International
MOSFET N-CH 100V 57A TO-220AB
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