TYPE | DESCRIPTION |
---|
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 30V |
Continuous Drain Current (Ids) | 210A |
The IRF3703PBF is a HEXFET® N-channel Power MOSFET offers low gate impedance to reduce switching losses. It is suitable for synchronous rectification and active O-ring.
● Ultra-low ON-resistance
● Fully avalanche rating
Infineon
9 Pages / 0.17 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 30V 210A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.3Milliohms; ID 210A; TO-220AB; PD 230W; -55de
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