| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 150V |
| Continuous Drain Current (Ids) | 23A |
The IRF3315PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
8 Pages / 0.22 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Single N-Channel 150V 136W 95NC Hexfet Power Mosfet Flange Mount - TO-220AB
IRF
Power MOSFET(Vdss=150V, Rds(on)=0.07Ω, Id=27A)
International Rectifier
Trans MOSFET N-CH 150V 21A 3Pin(2+Tab) D2PAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.082Ω; ID 21A; TO-220AB; PD 94W; VGS +/-20V
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