VDSS= 55V
●RDS(on)= 6.5mΩ
●ID= 75A
●Description
●Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features
●Advanced Process Technology
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
International Rectifier
0.29 MByte
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin (3+Tab) TO-220AB
Major Brands
Transistor IRF3205 TO-220 N Channel MOSFET
IRF
Power MOSFET(Vdss=55V, Rds(on)=8mohm, Id=110A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 55V 110A 3Pin(2+Tab) D2PAK T/R
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