| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 75V |
| Continuous Drain Current (Ids) | 170A |
The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.41 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.05 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 3 Milliohms; ID 160A; D2Pak; PD 300W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 3.5Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20
International Rectifier
Trans MOSFET N-CH 75V 170A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 75V 170A 3Pin(2+Tab) D2PAK Tube
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