| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 75V |
| Continuous Drain Current (Ids) | 82A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF2807SPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
11 Pages / 0.26 MByte
Infineon
9 Pages / 0.14 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 80V 82A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=75V, Id=82A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 13 Milliohms; ID 82A; TO-220AB; PD 230W; gFS 38S
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 7.5Milliohms; ID 89A; TO-220AB; PD 170W; -55deg
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