| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 80V |
| Continuous Drain Current (Ids) | 82A |
The IRF2807PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
8 Pages / 0.22 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
International Rectifier
Trans MOSFET N-CH 80V 82A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=75V, Id=82A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 13 Milliohms; ID 82A; TO-220AB; PD 230W; gFS 38S
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 7.5Milliohms; ID 89A; TO-220AB; PD 170W; -55deg
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