| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 80V |
| Continuous Drain Current (Ids) | 130A |
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Dynamic dV/dt rating
● Repetitive avalanche allowed up to Tjmax
Infineon
9 Pages / 0.26 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=75V, Rds(on)=0.0078Ω, Id=130A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 0.0078Ω; ID 130A; TO-220AB; PD 330W; VGS +/-20
International Rectifier
Trans MOSFET N-CH 75V 100A 3Pin(2+Tab) D2PAK T/R
International Rectifier
MOSFET 75V 1 N-CH HEXFET 7.8mOhms 160NC
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