| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 42A |
The IRF1310NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
8 Pages / 0.57 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ω; ID 42A; TO-220AB; PD 160W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin (3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin(2+Tab) D2PAK
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