| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 42.0 A |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Part Family | IRF1310N |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 42.0 A |
| Rise Time | 56.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
●N-Channel Power MOSFET 40A to 49A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
12 Pages / 0.37 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
5 Pages / 0.04 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ω; ID 42A; TO-220AB; PD 160W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin (3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 100V 42A 3Pin(2+Tab) D2PAK
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