| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 40V |
| Continuous Drain Current (Ids) | 100A |
The IRF1104PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
9 Pages / 0.18 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRF
Power MOSFET(Vdss=40V, Rds(on)=0.009Ω, Id=100A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.009Ω; ID 100A; TO-220AB; PD 170W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 40V 100A 3Pin(2+Tab) D2PAK
International Rectifier
IRF1104LPBF N-channel MOSFET Transistor, 100A, 40V, 3Pin TO-262
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