TYPE | DESCRIPTION |
---|
Case/Package | REEL |
Polarity | N-CH |
Drain to Source Voltage (Vds) | 60V |
Continuous Drain Current (Ids) | 79A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
The IRF1018ESPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
11 Pages / 0.41 MByte
Infineon
9 Pages / 0.14 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 60V 79A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 60V 79A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 60V 79A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 60V 79A 3Pin(3+Tab) TO-262 Tube
Vishay Semiconductor
MOSFET N-CH 60V 79A D2PAK
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