| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 79A |
The IRF1018EPBF is a 60V single N-channel HEXFET® Power MOSFET with high speed power switching and enhanced body diode dV/dt and dI/dt capability.
● High efficiency synchronous rectification in SMPS
● High frequency hard switching converter
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
Infineon
11 Pages / 0.41 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
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Vishay Semiconductor
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