| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 84A |
The IRF1010EZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Dynamic dV/dt rating
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.39 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.05 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
International Rectifier
Trans MOSFET N-CH 55V 85A 3Pin(2+Tab) D2PAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 6.8Milliohms; ID 84A; TO-220AB; PD 140W; -55deg
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