TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247 |
Polarity | N-Channel |
Power Dissipation | 417 W |
Drain to Source Voltage (Vds) | 900V |
Continuous Drain Current (Ids) | 36.0 A |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
The IPW90R120C3 is a 600V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Very low energy storage in output capacitance (Eoss) at 400V
● Low gate charge (Qg)
● High efficiency and power density
● Outstanding performance
● High reliability
● Easy to use
Infineon
5 Pages / 0.25 MByte
Infineon
10 Pages / 0.27 MByte
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