| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 650V |
| Continuous Drain Current (Ids) | 43.3A |
The IPW65R080CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Limited voltage overshoot during hard commutation
● Easy to design in
● Low switching losses due to low Qrr at repetitive commutation on body diode
● Self limiting di/dt and dv/dt
● Low Qoss
● Reduced turn on and turn off delay times
Infineon
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