| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Power Dissipation | 481 W |
| Drain to Source Voltage (Vds) | 650V |
| Continuous Drain Current (Ids) | 77.5A |
The IPW60R041C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.
● Easy to control of switching behaviour
● Very high commutation ruggedness
● Better light load efficiency compared to C3
● Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
● Improved power density
● Improved reliability
● Improved efficiency in hard switching applications
● Reduces possible ringing due to PCB layout
Infineon
13 Pages / 0.84 MByte
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