IPT007N06NATMA1 Datasheet PDF - Infineon

The IPT007N06N is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

● Industry"s lowest R DS(on)

● Highest current capability up to 300A

● Very low package parasitic and inductances

● Less paralleling and cooling required

● Highest system reliability

● Enabling very compact design

● 100% Avalanche tested

● Superior thermal resistance

● Qualified according to JEDEC for target applications

● Halogen-free, Green device