The IPP65R190C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
● Revolutionary best-in-class RDS (ON)
● Reduced energy stored in output capacitance (EOSS)
● Space saving through use of smaller packages or reduction of parts
● Improved safety margin and suitable for both SMPS and Solar Inverter applications
● Lowest conduction losses
● Low switching losses
● Better light load efficiency
● Increasing power density
● Outstanding CoolMOS™ quality
