| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Power Dissipation | 66.0 W |
| Drain to Source Voltage (Vds) | 500V |
| Continuous Drain Current (Ids) | 7.10 A |
Summary of Features:
● Lowest figure of merit R on x Q g
● Ultra low gate charge
● Extreme dv/dt rate
● Ultra low R DS(on), ultra low gate charge, very fast switching
● V th 3 V, g fs very high, internal R g very low
● High current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class price/performance ratio
●Target Applications:
● Solar
● Server
● Telecom
● Consumer
● Adapter
● PC power
Infineon
10 Pages / 0.53 MByte
Infineon
10 Pages / 0.54 MByte
Infineon
6 Pages / 1.89 MByte
Infineon
MOSFET N-CH 550V 7.1A TO-220
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