| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Power Dissipation | 104 W |
| Drain to Source Voltage (Vds) | 500V |
| Continuous Drain Current (Ids) | 12.0 A |
The IPP50R299CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.
● Extreme dV/dt rate
● Ultra low RDS (ON), very fast switching
● Very low internal Rg
● High peak current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
● Qualified according to JEDEC for target applications
● Green device
Infineon
10 Pages / 0.53 MByte
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10 Pages / 0.26 MByte
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6 Pages / 1.89 MByte
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10 Pages / 0.27 MByte
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