| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 900V |
| Continuous Drain Current (Ids) | 5.1A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Cut Tape (CT) |
The IPD90R1K2C3 is a 900V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for quasi resonant flyback/forward topologies and PC silverbox applications.
● Low figure-of-merit(FOM) RON x Qg
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Low specific ON-state resistance
● Very low energy storage in output capacitance (Eoss)
● Field proven CoolMOS™ quality
● High efficiency and power density
● Outstanding performance
● High reliability
● Ease of use
Infineon
10 Pages / 0.37 MByte
Infineon
2 Pages / 0.02 MByte
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