IPD65R190C7ATMA1 Datasheet PDF - Infineon

The IPD65R190C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world"s lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

● Reduced energy stored in output capacitance (Eoss)

● Lower gate charge

● Space-saving through reduction of parts

● Improved safety margin

● Lowest conduction losses

● Low switching losses

● Better light load efficiency

● Increasing power density