| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 120V |
| Continuous Drain Current (Ids) | 75A |
The IPD110N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
● Excellent switching performance
● World"s lowest RDS (ON)
● Very low Qg and Qgd
● Excellent gate charge x RDS (ON) product (FOM)
● Halogen-free, Green device
● Qualified according to JEDEC for target application
● MSL1 rated 2
Infineon
11 Pages / 0.57 MByte
Infineon
2 Pages / 0.02 MByte
Infineon
5 Pages / 0.05 MByte
Infineon
Trans MOSFET N-CH 120V 75A 3Pin(2+Tab) TO-252
Infineon
MOSFET N-CH 120V 75A TO252-3
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