| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-263-3 |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 40V |
| Continuous Drain Current (Ids) | 120A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
The IPB120P04P4L-03 is a P-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
● Logic level
● AEC qualified
● MSL1 up to 260°C peak reflow
● Green device
● 100% Avalanche tested
● Simple interface drive circuit
● World"s lowest RDS (ON) at 40V
● Highest current capability
● Lowest switching and conduction power losses for highest thermal efficiency
● Robust packages with superior quality and reliability
Infineon
9 Pages / 0.24 MByte
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