| TYPE | DESCRIPTION |
|---|
| Number of Pins | 7 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 180A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IPB025N10N3 G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
● Excellent switching performance
● Environmentally-friendly
● Increased efficiency
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy to design
Infineon
9 Pages / 0.64 MByte
Infineon
MOSFET N-CH 100V 180A TO263-7
Infineon
Trans MOSFET N-CH 100V 180A 7Pin TO-263 T/R
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