| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Current Rating | 150 mA |
| Case/Package | SOT-457 |
| Polarity | NPN, PNP |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 50V |
| Continuous Collector Current | 0.15A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The IMZ1AT108 is a NPN-PNP general purpose Bipolar Transistor Array with epitaxial planar silicon structure. It has mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
● Transistor elements are independent, eliminating interference
● Mounting area can be cut in half
● Ultra-compact complex digital transistor
● Potential divider type
● Small surface-mount package
ROHM Semiconductor
4 Pages / 0.05 MByte
ROHM Semiconductor
12 Pages / 3.68 MByte
ROHM Semiconductor
1 Pages / 0.12 MByte
ROHM Semiconductor
SMT6/SOT-457 NPN+PNP 50V 0.15A
ROHM Semiconductor
General purpose transistor (dual transistors)
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