Summary of Features:
● Lowest saturation voltage V CE(sat) of only 1.05V
● Low switching losses of 1.6mJ @ 25°C for 30A IGBT
● High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
● Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package
●Benefits:
● Higher efficiency for 50Hz
● Longer lifetime and higher reliability of IGBT
● High design reliability due to stable thermal performance
●Target Applications:
● UPS
● Solar
● Welding
Infineon
16 Pages / 1.88 MByte
Infineon
650V DuoPack IGBT and full-rated diode High speed series fifth generation
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Trans IGBT Chip N-CH 650V 90A 395000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 650V 80A 395000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 650V 80A 395000mW 3Pin(3+Tab) TO-247 Tube
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