Summary of Features:
● Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
● Low switching losses for high efficiency
● Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
● Fast switching behavior with low EMI emissions
● Optimized diode for target applications, meaning further improvement in switching losses
● Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
● Short circuit capability
● Offering T j(max) of 175°C
● Packaged with and without freewheeling diode for increased design freedom
●Benefits:
● Excellent cost/performance
● Low switching and conduction losses
● Very good EMI behavior
● A small gate resistor for reduced delay time and voltage overshoot
● Smaller die sizes -> smaller packages
● Best-in-class IGBT efficiency and EMI behavior
