| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220 |
The IKP20N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
● Lowest Vce (sat) drop for lower conduction losses
● Low switching losses
● Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
● High ruggedness, temperature stable behaviour
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
● Highest efficiency
● Low conduction and switching losses
Infineon
14 Pages / 0.44 MByte
Infineon
Trans IGBT Chip N-CH 600V 40A 166000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
Trans IGBT Chip N-CH 600V 40A 170000mW 3Pin(3+Tab) TO-220 Tube
Infineon
Trans IGBT Chip N-CH 600V 40A 166000mW 3Pin(3+Tab) TO-220AB Tube
Infineon
IGBT 600V 40A 166W TO220-3-1
Infineon
Trans IGBT Chip N-CH 600V 40A 156000mW Automotive 3Pin(3+Tab) TO-220
Infineon
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-220
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
