| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO220-3 |
| Polarity | N-Channel |
| Power Dissipation | 130 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Summary of Features:
● Lowest V ce(sat) drop for lower conduction losses
● Low switching losses
● Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
● Very soft, fast recovery anti-parallel Emitter Controlled Diode
● High ruggedness, temperature stable behavior
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
●Benefits:
● Highest efficiency – low conduction and switching losses
● Comprehensive portfolio in 600V and 1200V for flexibility of design
● High device reliability
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Trans IGBT Chip N-CH 600V 26A 130000mW 3Pin(3+Tab) TO-220AB Tube
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Trans IGBT Chip N-CH 600V 30A 3Pin(3+Tab) TO-220AB
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