The IKB10N60T is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
● Lowest Vce (sat) drop for lower conduction losses
● Low switching losses
● Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
● Very soft, fast recovery anti-parallel emitter controlled HE diode
● High ruggedness, temperature stable behaviour
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
● Highest efficiency - Low conduction and switching losses
● High device reliability
● 5µs Short-circuit withstand time
● Green product
● Halogen-free
