Summary of Features:
● Lowest V CE(sat) and V f
● 650 V blocking voltage
● 3 μsec short-circuit protection capability
● Optimized for switching frequencies from 8–30 kHz
● Maximum junction temperature 175°C
● Short circuit withstand time 3 μs
● Low gate charge QG
●Benefits:
● Good thermal performance, especially at higher frequencies
● Low losses to meet energy efficiency requirements
● Increased design margin and reliability
● Leading price/performance
Infineon
Trans IGBT Chip N-CH 650V 14A 33300mW 3Pin(3+Tab) TO-220FP Tube
Infineon
Trans IGBT Chip N-CH 650V 14A 33300mW 3Pin(3+Tab) TO-220FP Tube
Infineon
INFINEON IKA15N65F5 IGBT Single Transistor, 15A, 1.6V, 33.3W, 650V, TO-220, 3Pins
Infineon
INFINEON IKA15N65H5 IGBT Single Transistor, 15A, 1.65V, 33.3W, 650V, TO-220, 3Pins
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