| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Summary of Features:
● Lowest V ce(sat) drop for lower conduction losses
● Low switching losses
● Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
● Very soft, fast recovery anti-parallel Emitter Controlled HE diode
● High ruggedness, temperature stable behavior
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
●Benefits:
● Highest efficiency – low conduction and switching losses
● Comprehensive portfolio in 600V and 1200V for flexibility of design
● High device reliability
Infineon
12 Pages / 0.33 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
1 Pages / 0.17 MByte
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Trans IGBT Chip N-CH 1200V 100A 375000mW 3Pin(3+Tab) TO-247 Tube
Infineon
IGBT Single Transistor, 60A, 2.4V, 375W, 1.2kV, TO-247, 3Pins
Infineon
Trans IGBT Chip N-CH 600V 80A 416000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 600V 80A 3Pin TO-247 Tube
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