TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Summary of Features:
● Lowest V ce(sat) drop for lower conduction losses
● Low switching losses
● Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
● Very soft, fast recovery anti-parallel Emitter Controlled Diode
● High ruggedness, temperature stable behavior
● Low EMI emissions
● Low gate charge
● Very tight parameter distribution
●Benefits:
● Highest efficiency – low conduction and switching losses
● Comprehensive portfolio in 600V and 1200V for flexibility of design
● High device reliability
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Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
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Trans IGBT Chip N-CH 600V 100A 3Pin(2+Tab) TO-263
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