The IDW20G65C5 is a SiC Schottky Diode features higher safety margin against overvoltage and complements CoolMOS™ offer, reduced EMI compared to snappier Silicon diode reverse recovery waveform. The 5th generation thinQ!™ compact Schottky diode with thin-wafer technology and it is improves efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ generation 5 has been designed to complement 650V CoolMOS™ families, this ensures meeting the most stringent application requirements in this voltage range.
● Revolutionary semiconductor material-silicon carbide
● Reduced cooling requirements
● No reverse recovery/no forward recovery
● Temperature independent switching behaviour
● High surge current capability
● Increased efficiency compared to silicon diode alternatives
● Enabling higher frequency/increased power density solutions
● Higher system reliability due to lower operating temperatures
● Reduced EMI
● Reduced risks of thermal runaway
