TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 75.0 A |
Case/Package | TO-247 |
Drain to Source Resistance (on) (Rds) | 8.00 mΩ |
Polarity | N-Channel |
Power Dissipation | 515 W |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Continuous Drain Current (Ids) | 75.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The HUF75652G3 is an UltraFET N-channel Power MOSFET with ultra-low ON-resistance.
● Peak current vs. pulse width curve
● UIS rating curve
● Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER
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Trans MOSFET N-CH 100V 75A 3Pin(3+Tab) TO-247 Rail
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MOSFET N-CH 100V 75A TO-247
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