| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 75.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 8.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 285 W |
| Input Capacitance | 3.20 nF |
| Gate Charge | 90.0 nC |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Rise Time | 125 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in portable and battery-operated products.
● Peak current vs pulse width curve
● UIS rating curve
● ±20V Gate-source voltage
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