| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-263-3 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 75A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
●These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
●Features
●• 75A, 55V
●• Simulation Models
●\- Temperature Compensated PSPICE® and SABER™ Models
●\- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
●• Peak Current vs Pulse Width Curve
●• UIS Rating Curve
●• Related Literature
●\- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Fairchild
75A, 55V, 0.012Ω, N-Channel UltraFET Power MOSFETs
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