| TYPE | DESCRIPTION |
|---|
| Number of Pins | 0 Pin |
| Supply Voltage (DC) | 7.50 V (min) |
| Case/Package | Die |
| Gain | 17.8 dB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Product Details
●The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19.1 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
●Applications
● Telecom Infrastructure
● Microwave Radio & VSAT
● Military & Space
● Test Instrumentation
● Fiber Optics
●### Features and Benefits
● P1dB Output Power: +26.5 dBm
● Gain: 19.1 dB
● Output IP3: +35 dBm
● Supply Voltage: +8V @ 300 mA
● 50 Ohm Matched Input/Output
● Die Size: 3.115 x 1.630 x 0.1 mm
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