| TYPE | DESCRIPTION |
|---|
| Number of Pins | 0 Pin |
| Supply Voltage (DC) | 4.50 V (min) |
| Case/Package | Die |
| Gain | 13.0 dB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Product Details
●The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers.
●The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).
●Applications
● Radar, EW & ECM
● Microwave Radio
● Test Instrumentation
● Military & Space
● Fiber Optic Systems
●### Features and Benefits
● Ultra Low Phase Noise:
●-160 dBc/Hz @ 10 kHz
● P1dB Output Power: +15 dBm
● Gain: 14 dB
● Output IP3: +27 dBm
● Supply Voltage: +5V @64 mA
● 50 Ohm Matched Input/Output
● Die Size: 2.80 x 1.73 x 0.1 mm
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