| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 24.0 A |
| Case/Package | TO-220 |
| Polarity | NPN |
| Power Dissipation | 104 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Tube |
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
●high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between
●25oC and 150oC.
●The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor
●controls, power supplies and drivers for solenoids, relays and contactors.
●Features
●• 24A, 600V at TC= 25oC
●• 600V Switching SOA Capability
●• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150oC
●• Short Circuit Rating
●• Low Conduction Loss
Fairchild
7 Pages / 0.16 MByte
Fairchild
7 Pages / 0.16 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR HGTP12N60C3D IGBT Single Transistor, 24A, 1.8V, 104W, 600V, TO-220AB, 3Pins
Fairchild
Trans IGBT Chip N-CH 600V 54A 167000mW 3Pin(3+Tab) TO-220AB Rail
Intersil
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild
Trans IGBT Chip N-CH 600V 54A 3Pin(3+Tab) TO-220AB Rail
Fairchild
Trans IGBT Chip N-CH 600V 24A 3Pin(3+Tab) TO-220AB Rail
Intersil
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
