| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247 |
| Power Dissipation | 291 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
75A, 600V, UFS Series N-Channel IGBT
●The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
●drop varies only moderately between 25oC and 150oC.
●Features
●• 75A, 600V, TC= 25oC
●• 600V Switching SOA Capability
●• Typical Fall Time . . . . . . . . . . . . . . . . 100ns at TJ= 150oC
●• Short Circuit Rating
●• Low Conduction Loss
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